PART |
Description |
Maker |
AS7C1024L-55PC AS7C1024L-55TC AS7C1024L-55JC AS7C1 |
x8 SRAM x8SRAM x8 SRAM x8的SRAM
|
Microchip Technology, Inc.
|
HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28 x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28 x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
GS816033T-166I GS816019T-133 GS816019T-150 GS81601 |
166MHz 512K x 32 synchronous SRAM 133MHz 1M x 18 synchronous SRAM 150MHz 1M x 18 synchronous SRAM 166MHz 1M x 18 synchronous SRAM 200MHz 1M x 18 synchronous SRAM 225MHz 1M x 18 synchronous SRAM 250MHz 1M x 18 synchronous SRAM
|
GSI Technology
|
HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI |
Low Power Slow SRAM - 256Kb SWITCH, REED SPST-NO 10W SMD QSW-REED,10MM,10W,SMD 9 POS FR-4 SIP SOCKET x8|3V|70/85/100|Low Power Slow SRAM - 256K x8|3.3V|70/85/100|Low Power Slow SRAM - 256K 32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM x8 SRAM x8的SRAM x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc. Analog Devices, Inc. Panasonic Industrial Solutions
|
CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (256-kword X 16-bit) From old datasheet system
|
http:// RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
|
HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100 117MHz 11ns 64K x 32 2M synchronous burst SRAM 66MHz 18ns 64K x 32 2M synchronous burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT |
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100 2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100 2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100 DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL Sync SRAM - 2.5V 2.5V 512K x 32/36 flowthrough burst synchronous SRAM
|
Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC Alliance Semiconductor ...
|